Samsung seems to understand that the future of memory storage will hold and what the future products will demand with the latest unveiling of its UFS 4.0 standard. They are testing their limits with what they can achieve in terms of internal storage, which could prove essential for future products. It certainly brings a lot more improvements on the existing UFS 3.1 standard.
The UFS 4.0 storage comes with Samsung’s proprietary Gen 7 V-NAND flash memory along with the company’s own proprietary controller. Using this combination, the UFS 4.0 standard will be able to achieve read speeds of 4,200 MB/s. This number is clearly higher than what we’ve seen on the 3.0 standard. In addition, the new UFS 4.0 will be able to produce write speeds of up to 2,800 MB/s.
“UFS 4.0 offers speeds of up to 23.2 Gbps per lane, double the previous UFS 3.1. That bandwidth is perfect for 5G smartphones that require massive amounts of data processing, and is expected to be applied in future automotive, AR and VR applications as well.”
In terms of efficiency, the 4.0 standard has led the way, leaving the 3.0 standard behind. Samsung claims that with the UFS 4.0 standard, they have achieved 46 percent more energy savings in sequential read speeds compared to the previous generation 3.0. The total bandwidth has also been increased to 23.2. Gbps per lane which is double that on the 3.0 standard.
The UFS 4.0 standard is also more efficient, with Samsung claiming 46 percent energy savings when it comes to sequential read speeds compared to the previous generation. Additionally. UFS 4.0 increases total bandwidth to 23.2 Gbps per lane, doubling the maximum limit of UFS 3.1.
Using these amazing speeds on the UFS 4.0, the apps will also be more responsive and open faster. This is expected to match the NVMe storage used by Apple on their iPhones.